Improved phase-change characteristics of Zn-doped amorphous Sb7Te3 films for high-speed and low-power phase change memory
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4816062
Reference22 articles.
1. Ga2Te3Sb5-A Candidate for Fast and Ultralong Retention Phase-Change Memory
2. Rapid‐phase transitions of GeTe‐Sb2Te3pseudobinary amorphous thin films for an optical disk memory
3. A map for phase-change materials
4. Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurements
5. Ga-Sb-Se material for low-power phase change memory
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