Surface transition induced island formation on thin strained InGaN layers on GaN (0001) in metal-organic vapour phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3647782
Reference26 articles.
1. Spiral Growth of InGaN Nanoscale Islands on GaN
2. Optical and Structural Properties of In0.08GaN/In0.02GaN Multiple Quantum Wells Grown at Different Temperatures and with Different Indium Supplies
3. Investigations of growth of self-assembled GaInN–GaN islands on SiC substrate by metalorganic vapor phase epitaxy
4. Growth of In-rich InGaN/GaN quantum dots by metalorganic chemical vapor deposition
5. Growth modes in heteroepitaxy of InGaN on GaN
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