Antiphase‐domain‐free GaAs grown on pseudomorphic Si (100) surfaces by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102768
Reference9 articles.
1. Polar-on-nonpolar epitaxy
2. Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)
3. Self-Annihilation of Antiphase Boundary in GaAs on Si(100) Grown by Molecular Beam Epitaxy
4. The Growth of Single Domain GaAs Films on Double Domain Si(001) Substrates by Molecular Beam Epitaxy
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