Effects of microwave power on the structural and emission properties of hydrogenated amorphous silicon carbide deposited by electron cyclotron resonance chemical vapor deposition-Reference-Cited by-同舟云学术

Effects of microwave power on the structural and emission properties of hydrogenated amorphous silicon carbide deposited by electron cyclotron resonance chemical vapor deposition

Published:2001-03 Issue:5 Volume:89 Page:2699-2705
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Cui J.,Rusli ,Yoon S. F.,Yu M. B.,Chew K.,Ahn J.,Zhang Q.,Teo E. J.,Osipowicz T.,Watt F.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1344218

Reference51 articles.

1. Bonding structure and defects in wide band gap a-Si1−xCx:H films deposited in Hz diluted SiH4+ CH4gas mixtures

2. Amorphous and Microcrystalline SiC as New Synthetic Wide Gap Semiconductors

3. Visible-Light Injection-Electroluminescent a-SiC/p-i-n Diode

4. Recent Progress of Amorphous Silicon Solar Cell Technology

5. Transport and photoluminescence of hydrogenated amorphous silicon–carbon alloys

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