Composition control of GaxIn1−xAs films grown by MBE onto InP substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.91340
Reference6 articles.
1. Growth of Ga y In1 − y As / InP Heterostructures by Molecular Beam Epitaxy
2. Substrate temperature limits for epitaxy of InP by MBE
3. The evaporation of InP under Knudsen (equilibrium) and Langmuir (free) evaporation conditions
4. Surface processes controlling the growth of GaxIn1−xAs and GaxIn1−xP alloy films by MBE
5. Preferential evaporation of In from GaxIn1−xAs
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. MBE growth of GaAs and III-V alloys;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1983
2. Growth and characterization of InGaAsP lattice-matched to InP;Journal of Materials Science;1981-11
3. Molecular Beam Epitaxy of III-V Compounds: Technology and Growth Process;Annual Review of Materials Science;1981-08
4. Arsenic stabilization of InP substrates for growth of GaxIn1−xAs layers by molecular beam epitaxy;Applied Physics Letters;1980-08
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