Persistent photoconductivity in SiGe/Si quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368150
Reference27 articles.
1. Enhancement- and depletion-mode p-channel GexSi1-xmodulation-doped FET's
2. Broadband (8–14 μm), normal incidence, pseudomorphic GexSi1−x/Si strained‐layer infrared photodetector operating between 20 and 77 K
3. Normal incidence infrared detector usingp‐type SiGe/Si multiple quantum wells
4. High-speed performance of Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors
5. Influence of clustering on the mobility of III‐V semiconductor alloys
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