Growth kinetics of oxides during furnace oxidation of Si in N2O ambient
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360075
Reference20 articles.
1. MOS characteristics of ultrathin SiO/sub 2/ prepared by oxidizing Si in N/sub 2/O
2. P-channel MOSFET's with ultrathin N/sub 2/O gate oxides
3. High Quality Ultrathin Gate Dielectrics Formation by Thermal Oxidation of Si in N 2 O
4. Silicon Oxynitride Formation In Nitrous Oxide (N/sub 2/O): The Role Of Nitric Oxide (NO)
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1. Effects of temperature and pressure in oxynitridation kinetics on Si(100) with N 2 O gas;Materials Science in Semiconductor Processing;2017-11
2. Modelling of silicon oxynitridation by nitrous oxide using the reaction rate approach;Journal of Applied Physics;2013-12-14
3. Nonconservative Ostwald ripening of a dislocation loop layer under inert nitrogen-rich SiO2∕Si interfaces;Journal of Applied Physics;2006-05-15
4. Effect of Nitrogen on Diffusion in Silicon Oxynitride;Japanese Journal of Applied Physics;2005-11-09
5. Comment on “Growth kinetics of oxides during furnace oxidation of silicon in N2O ambient” [J. Appl. Phys. 78, 2767 (1995)];Journal of Applied Physics;2004-02-15
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