Impacts of recombination at the surface and in the substrate on carrier lifetimes of n-type 4H–SiC epilayers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3498818
Reference37 articles.
1. Step-controlled epitaxial growth of SiC: High quality homoepitaxy
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3. Performance and Reliability Issues of SiC-Schottky Diodes
4. Static and Dynamic Characteristics of 4H-SiC JFETs Designed for Different Blocking Categories
5. High-Power SiC Diodes: Characteristics, Reliability and Relation to Material Defects
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2. Investigation of carrier lifetime behavior in the 4H-SiC homoepitaxial layer;2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia);2023-08-27
3. Surface defects in 4H-SiC: properties, characterizations and passivation schemes;Semiconductor Science and Technology;2023-06-08
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5. The role of boron related defects in limiting charge carrier lifetime in 4H–SiC epitaxial layers;APL Materials;2023-03-01
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