Electrical characteristics of AlxGa1−xN Schottky diodes prepared by a two-step surface treatment
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1769096
Reference39 articles.
1. Progress and prospects of group-III nitride semiconductors
2. Emerging gallium nitride based devices
3. The role of the tunneling component in the current–voltage characteristics of metal-GaN Schottky diodes
4. Determination of intrinsic barrier height in the Au/n-GaN contact system
5. Determination of intrinsic barrier height in the Au/n-GaN contact system
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