High‐efficiency superlattice graded‐index separate confining heterostructure lasers with AlGaAs single quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99096
Reference9 articles.
1. Optimizing the performance of AlGaAs graded index separate confining heterostructure quantum well lasers
2. Cavity length dependence of the threshold behavior in thin quantum well semiconductor lasers
3. Room Temperature Operation of 650 nm AlGaAs Multi-Quantum-Well Laser Diode Grown by Molecular Beam Epitaxy
4. Low‐threshold room‐temperature cw operation of (AlGaAs)m(GaAs)nsuperlattice quantum well lasers emitting at ∼680 nm
5. Application of AlAs‐GaAs superlattices to step‐index and graded‐index waveguide separate‐confinement heterostructure laser diodes
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2. Cavity length dependence of the peak conversion efficiency in AlGaAs lasers;Journal of Applied Physics;1996-04
3. 752 nm wing-pumped Cr:LiSrAlF/sub 6/ laser;IEEE Journal of Quantum Electronics;1992-04
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5. Fabrication of 780-nm AlGaAs Tunable Distributed Bragg Reflector Laser Diodes by Using Compositional Disordering of a Quantum Well;Japanese Journal of Applied Physics;1991-12-15
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