Charging effect of Al2O3 thin films containing Al nanocrystals
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2994695
Reference13 articles.
1. High-performance polycrystalline SiGe thin-film transistors using Al2O3 gate insulators
2. Hybrid titanium–aluminum oxide layer as alternative high-k gate dielectric for the next generation of complementary metal–oxide–semiconductor devices
3. Low temperature (<400°C) Al2O3 ultrathin gate dielectrics prepared by shadow evaporation of aluminum followed by nitric acid oxidation
4. Al2O3 with Metal-Nitride nanocrystals as a charge trapping layer of MONOS-type nonvolatile memory devices
5. Atomic layer deposited Al2O3 for gate dielectric and passivation layer of single-walled carbon nanotube transistors
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2. Nanoparticle-assisted Frenkel–Poole emission in two-terminal charging-controlled memory devices based on Si-rich silicon nitride thin films;Applied Physics A;2017-09-23
3. Understanding the Resistive Switching Phenomena of Stacked Al/Al2O3/Al Thin Films from the Dynamics of Conductive Filaments;Complexity;2017
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