Tunneling to traps in insulators
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1661067
Reference7 articles.
1. MEMORY BEHAVIOR OF AN MNS CAPACITOR
2. Charge Transport and Storage in Metal‐Nitride‐Oxide‐Silicon (MNOS) Structures
3. Charge Transport and Storage in Metal‐Nitride‐Oxide‐Silicon (MNOS) Structures
4. Theory of the thin-oxide m.n.o.s. memory transistor
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