Abnormal topological domains in a high-density array of ferroelectric nanodots

Author:

Li Zhongwen1ORCID,Bo Rui1ORCID,Shen Hui1ORCID,Lin Yi1ORCID,Song Guang1ORCID,Wang Yanzong1ORCID,Li Guannan1ORCID,Nan Feng1ORCID,Wang Chao1ORCID,Wu Yangjiang2ORCID,Zhang Zhengzhong13ORCID,Liu Hao14ORCID

Affiliation:

1. Faculty of Mathematics and Physics, Huaiyin Institute of Technology 1 , Huai'an, Jiangsu 223003, China

2. Department of Materials Science, Institute of Molecular Materials and Devices, Fudan University 2 , Shanghai 200438, China

3. Nano Science and Technology Institute, University of Science and Technology of China 3 , Suzhou 215123, China

4. Department of Applied Physics, School of Science, Nanjing University of Science and Technology 4 , Nanjing 210094, China

Abstract

Utilizing vector PFM (piezoresponse force microscopy) on high-density nanodot arrays, ferroelectric nanodots and domain structure in nanodot arrays were investigated in the current study. Accordingly, we identified four types of topological domain states based on the measurements of spontaneous polarization vectors vs writing results in nanodots. In addition to convergent and divergent domains with upward and downward polarization, double-center domains and triple-center domains were also identified. In addition, center domains could be reversibly switched under the electric field produced by the biased PFM tip, and their stability could be maintained by compensating the polarization charge with the accumulated charge. These stable topological domain states in discrete nanodots present an opportunity to further investigate their new properties in high-density memory devices.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

Huai'an Municipal Science and Technology Bureau

Natural Science Foundation of the Jiangsu Higher Education Institutions of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

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