GaAs/GaAs1−ySbysuperlattice light emitting diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332894
Reference10 articles.
1. Defects in epitaxial multilayers
2. Electronic structure of GaAsxP1−x/GaP strained‐layer superlattices with x<0.5
3. Continuous 300‐K laser operation of strained superlattices
4. Optical studies of InxGa1−xAs‐GaAs strained multiquantum well structures
5. Doping and transport studies in InxGa1−xAs/GaAs strained-layer superlattices
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1. Citric Acid Etching of GaAs1 − x Sb x , Al0.5Ga0.5Sb , and InAs for Heterostructure Device Fabrication;Journal of The Electrochemical Society;1994-12-01
2. Molecular‐beam‐epitaxial‐grown n‐GaAs1−xSbx/N‐GaAs heterostructures characterized by admittance spectroscopy;Journal of Applied Physics;1993-06
3. Compositional dependence of Schottky barrier heights of Au on MBE grown GaAs1−xSbx;Solid-State Electronics;1992-01
4. Schottky diodes of Au on GaAs/sub 1-x/Sb/sub x//GaAs n-N heterostructures grown by MBE;IEEE Electron Device Letters;1990-10
5. Interband transitions in InxGa1−x As/GaAs strained layer superlattices;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1989-09
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