High-frequency surface acoustic wave devices based on epitaxial Z-LiNbO3 layers on sapphire-Reference-Cited by-同舟云学术

High-frequency surface acoustic wave devices based on epitaxial Z-LiNbO3 layers on sapphire

Published:2019-04-22 Issue:16 Volume:114 Page:162905
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Almirall Anthony¹²,Oliveri Stefania¹,Daniau William¹,Margueron Samuel¹^ORCID,Baron Thomas¹,Boulet Pascal³^ORCID,Ballandras Sylvain⁴,Chamaly Stephane²^ORCID,Bartasyte Ausrine¹^ORCID

Affiliation:

1. FEMTO-ST Institute, University of Bourgogne Franche-Comté, CNRS (UMR 6174), ENSMM, 26 rue de l'Epitaphe, 25030 Besançon, France

2. Qualcomm France RFFE SARL, 1090, route des Crêtes, 06560 Sophia-Antipolis, France

3. Jean Lamour Institute, CNRS (UMR 7198), Université de Lorraine, 2 allée André Guinier, 54011 Nancy, France

4. frec|n|sys SAS, 18 Rue Alain Savary, 25000 Besançon, France

Funder

Agence Nationale de la Recherche

Conseil régional de Bourgogne-Franche-Comté

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5086757

Reference23 articles.

1. Theoretical study on SAW characteristics of layered structures including a diamond layer

2. Matrix methods applied to acoustic waves in multilayers

3. Epitaxial growth and surface acoustic wave properties of lithium niobate films grown by pulsed laser deposition

4. Surface acoustic wave characteristics based on c-axis (006) LiNbO3/diamond/silicon layered structure

5. Thick LiNbO3 layers on diamond-coated silicon for surface acoustic wave filters

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