Stress-induced anisotropy of phosphorous islands on gallium arsenide
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1314290
Reference17 articles.
1. Scanning tunneling microscopy of the GaAs(001) surface morphology prepared by migration enhanced epitaxy
2. Atomic layer epitaxy—12 years later
3. Growth and equilibrium structures in the epitaxy of Si on Si(001)
4. Island Nucleation and Growth on Reconstructed GaAs(001) Surfaces
5. Adatom Densities on GaAs: Evidence for Near-Equilibrium Growth
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