Compositional inhomogeneities in AlGaN thin films grown by molecular beam epitaxy: Effect on MSM UV photodetectors
Author:
Affiliation:
1. Centre for Research in Nanoscience and Nanotechnology, University of Calcutta, Kolkata 700106, India
2. Institute of Radio Physics and Electronics, University of Calcutta, Kolkata 700009, India
Funder
Department of Science and Technology, Ministry of Science and Technology (DST)
Council of Scientific and Industrial Research (CSIR)
Department of Electronics and Information Technology, Ministry of Communications and Information Technology (DeitY)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4964420
Reference28 articles.
1. Advances in group III-nitride-based deep UV light-emitting diode technology
2. Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm
3. AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy
4. High responsitivity intrinsic photoconductors based on AlxGa1−xN
5. High‐speed solar‐blind AlGaN‐based metal–semiconductor–metal photodetectors
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