Modeling and analysis for thermal management in gallium oxide field-effect transistors-Reference-Cited by-同舟云学术

Modeling and analysis for thermal management in gallium oxide field-effect transistors

Published:2020-04-21 Issue:15 Volume:127 Page:154502
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Yuan Chao¹^ORCID,Zhang Yuewei²^ORCID,Montgomery Robert¹^ORCID,Kim Samuel¹,Shi Jingjing¹^ORCID,Mauze Akhil²,Itoh Takeki²^ORCID,Speck James S.²,Graham Samuel¹³^ORCID

Affiliation:

1. George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA

2. Materials Department, University of California, Santa Barbara, California 93106, USA

3. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA

Funder

Air Force Office of Scientific Research

Defense Threat Reduction Agency

Office of Naval Research

Multidisciplinary University Research Initiative

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5141332

Reference64 articles.

1. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

2. A review of Ga2O3materials, processing, and devices

3. Field-Plated Ga2O3MOSFETs With a Breakdown Voltage of Over 750 V

4. Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV

5. $\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation

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