Steady‐state electron and hole space charge distribution in LPCVD silicon nitride films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.90942
Reference10 articles.
1. Measurements of charge propagation in Si3N4 films
2. Simple technique for determination of centroid of nitride charge in MNOS structures
3. Memory loss in MNOS capacitors
4. MNOS charge versus centroid determination by staircase charging
5. Silicon nitride trap properties as revealed by charge−centroid measurements on MNOS devices
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