Electrical isolation of GaN by ion implantation damage: Experiment and model
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123874
Reference11 articles.
1. Ion implantation for isolation of III-V semiconductors
2. Thermal stability of 2H-implanted n- and p-type GaN
3. H, He, and N implant isolation of n‐type GaN
4. Group III nitride semiconductors for short wavelength light-emitting devices
5. Group III nitride semiconductors for short wavelength light-emitting devices
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