Strong near-infrared photoluminescence and absorption from Si/Si1−xGex type-II multiple quantum wells on bulk crystal SiGe substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1615310
Reference14 articles.
1. Bulk single crystal growth of silicon-germanium
2. Czochralski growth of bulk crystals of Ge1−xSix alloys
3. Growth and characterization of ultrahigh vacuum/chemical vapor deposition SiGe epitaxial layers on bulk single-crystal SiGe and Si substrates
4. Growth and Characterization of UHV/CVD Si/SiGe Strained-Layer Superlattices on Bulk Crystal SiGe Substrates
5. Growth and characterization of Si/SiGe strained-layer superlattices on bulk single-crystal SiGe and Si substrates
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Theoretical investigation of near gap electronic states of Si∕SiGe multiple quantum wells on (001)-Si or SiGe substrates;Journal of Applied Physics;2006-03
2. Leakage behavior of the quasi-superlattice stack for multilevel charge storage;Applied Physics Letters;2004-05-03
3. Quasi-Superlattice Storage;Journal of The Electrochemical Society;2004
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