Zn disordering of a Ga0.5In0.5P‐(AlxGa1−x)0.5In0.5P quantum well heterostructure grown by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101150
Reference14 articles.
1. 621 nm CW operation (0%C) of AlGaInP visible semiconductor lasers
2. Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band‐gap energy
3. Studies of GaxIn1−xP layers grown by metalorganic vapor phase epitaxy; Effects of V/III ratio and growth temperature
4. Growth of high-quality inGaAIP epilayers by MOCVD using methyl metalorganics and their application to visible semiconductors lasers
5. Exciton absorption, photoluminescence and band structure of N-Free and N-DOPED In1−xGaxP
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Passivation of Interfaces in High-Efficiency Photovoltaic Devices;MRS Proceedings;1999
2. Ordering in GaInP: Is it relevant for devices?;Physica E: Low-dimensional Systems and Nanostructures;1998-07
3. Thermodynamics of Semiconductor Alloys for Optoelectronics;Materials for Optoelectronics;1996
4. Suppression of Zn diffusion due to hydrogen passivation inp ‐AlGaInP;Applied Physics Letters;1994-09-05
5. AlGaInP QUANTUM WELL LASERS;Quantum Well Lasers;1993
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