Ultra-low voltage resistive switching of HfO2 buffered (001) epitaxial NiO films deposited on metal seed layers-Reference-Cited by-同舟云学术

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Ultra-low voltage resistive switching of HfO2 buffered (001) epitaxial NiO films deposited on metal seed layers

Published:2017-10-02 Issue:14 Volume:111 Page:142103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Qiu X. Y.¹^ORCID,Wang R. X.¹,Zhang Z.²,Wei M. L.¹,Ji H.³,Chai Y.²,Zhou F. C.²,Dai J. Y.²,Zhang T.¹,Li L. T.¹,Meng X. S.¹

Affiliation:

1. School of Physical Science and Technology, Southwest University, Chongqing 400715, China

2. Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China

3. School of Energy Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, Sichuan, China

Funder

the National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4990089

Reference28 articles.

1. Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

2. A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View

3. Short-term memory of TiO2-based electrochemical capacitors: empirical analysis with adoption of a sliding threshold

4. Switching properties of thin Nio films

5. Reproducible resistance switching in polycrystalline NiO films

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2. Pseudo-flexible resistive switching characteristics of nano-bowl-like NiO arrays on mica substrates;Applied Surface Science;2023-03

3. Tri-level resistive switching characteristics and conductive mechanism of HfO<sub>2</sub>/NiO<sub><i>x</i></sub>/HfO<sub>2</sub> stacks;Acta Physica Sinica;2023

4. Low-voltage resistive switching characteristics of nano-bowl-like NiO arrays;SCIENTIA SINICA Physica, Mechanica & Astronomica;2023-01-01

5. Three typical types of alternating I–V curves in ITO/BiFeO3/Al2O3/Ag multilayer structure;Applied Physics A;2022-02-25

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