Low temperature electrical transport properties in dilute 2D GaAs hole systems with magnetic field-Reference-Cited by-同舟云学术

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Low temperature electrical transport properties in dilute 2D GaAs hole systems with magnetic field

Published:2012 Issue: Volume: Page:
ISSN:0094-243X
Container-title:AIP Conference Proceedings
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Author:

Dlimi S.,El kaaouachi A.,Abdia R.,Narjis A.,Biskupski G.,Hemine J.,Limouny L.,Sybous S.

Publisher

AIP

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nature of the Metal Insulator Transition in High-Mobility 2D_Si-MOSFETs;Nanomaterials;2023-07-11

2. Analysis of thermoelectric effect of wet spun graphene fiber composites;International Journal of Low-Carbon Technologies;2023

3. Percolation Induced Metal–Insulator Transition in 2D Si/SiGe Quantum Wells;Transactions on Electrical and Electronic Materials;2021-09-26

4. Crossover between ballistic and diffusive regime in 2D SiGe quantum well;Applied Surface Science Advances;2021-03

5. Magnetoconductivity in a Disordered and Interacting 2D p-SiGe Quantum Well;Journal of the Korean Physical Society;2020-11-19

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