Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films-Reference-Cited by-同舟云学术

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Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films

Published:2015-04-21 Issue:15 Volume:117 Page:155101
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Altuntas Halit¹,Ozgit-Akgun Cagla²³,Donmez Inci²³,Biyikli Necmi²³

Affiliation:

1. Faculty of Science, Department of Physics, Cankiri Karatekin University, Cankiri 18100, Turkey

2. National Nanotechnology Research Center (UNAM), Bilkent University, Bilkent, Ankara 06800, Turkey

3. Institute of Materials Science and Nanotechnology, Bilkent University, Bilkent, Ankara 06800, Turkey

Funder

Marie Curie International Reintegration Grant

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4917567

Reference27 articles.

1. Deposition and characterization of amorphous aluminum nitride thin films for a gate insulator

2. Optical and electrical properties of dislocations in plastically deformed GaN

3. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

4. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

5. Self-Limiting Growth and Thickness- and Temperature- Dependence of Optical Constants of ALD AlN Thin Films

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