Growth mechanism of atomic layer deposited Al2O3 on GaAs(001)-4 × 6 surface with trimethylaluminum and water as precursors
Author:
Funder
National Science Council Taiwan
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4767129
Reference18 articles.
1. GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition
2. Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3
3. Impact of surface chemical treatment on capacitance-voltage characteristics of GaAs metal-oxide-semiconductor capacitors with Al2O3 gate dielectric
4. Comparison of n-type and p-type GaAs oxide growth and its effects on frequency dispersion characteristics
5. Self-cleaning and surface recovery with arsine pretreatment in ex situ atomic-layer-deposition of Al2O3 on GaAs
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