On the dispersion of electromigration failure times of Al alloy contacts to silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111421
Reference11 articles.
1. The electromigration failure distribution: The fine‐line case
2. Microstructure Based Modelling of Stress Migration and Electromigration Induced Failure Distributions
3. Comparison of Al electromigration in conventional Al alloy and W‐plug contacts to silicon
4. Lattice electromigration in narrow Al alloy thin-film conductors at low temperatures
5. Electromigration‐induced drift failure of via contacts in multilevel metallization
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Influence of W via on the mechanism of electromigration failure in Al–0.5 Cu interconnects;Applied Physics Letters;1998-06
2. Grain Boundary Electromigration in Thin Films: Interface Reaction and Segregation Effects;Defect and Diffusion Forum;1998-02
3. Diffusional creep as a stress relaxation mechanism in electromigration;Journal of Applied Physics;1998-01
4. The dependence of W-plug via EM performance on via size;Semiconductor Science and Technology;1996-06-01
5. A Complete Model of Lifetime Distribution for Electromigration Failure Including Grain Boundary and Lattice Diffusions in Submicron Thin Film Metallization;Japanese Journal of Applied Physics;1995-09-15
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