Silicon dynistors with subnanosecond switching times-Reference-Cited by-同舟云学术

Silicon dynistors with subnanosecond switching times

Published:2020-08-01 Issue:8 Volume:91 Page:084704
ISSN:0034-6748
Container-title:Review of Scientific Instruments
language:en
Short-container-title:Review of Scientific Instruments

Author:

Korotkov S. V.¹^ORCID,Aristov Yu. V.¹,Korotkov D. A.¹,Zhmodikov A. L.¹^ORCID

Affiliation:

1. Ioffe Institute, Polytechnicheskaya 26, St. Petersburg 194021, Russia

Publisher

AIP Publishing

Subject

Instrumentation

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0015284

Reference19 articles.

1. V. M. Efanov, A. F. Kardo-Sysoev, I. G. Tchashnicov, and P. M. Yarin, in Proceedings of 1996 International Power Modulator Symposium (IEEE, Boca Raton, FL, USA, 1996), p. 22.

2. A high-power semiconductor switch of high-voltage pulses with a rise time of nanosecond duration

3. Novel Closing Switches Based on Propagation of Fast Ionization Fronts in Semiconductors

4. Studying dynistor switches with nanosecond switching times

5. Superfast Thyristor-Based Switches Operating in Impact-Ionization Wave Mode

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