Photosensitive capacitance‐voltage characteristics of molecular beam epitaxially grown GaAs/AlGaAs/GaAs heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96729
Reference6 articles.
1. Capacitance‐voltage characteristics of GaAs‐AlAs heterostructures
2. Capacitance‐voltage and current‐voltage characteristics of molecular beam epitaxially grownp+‐GaAs/AlAs/n‐GaAs heterostructures
3. Investigation of heterojunctions for MIS devices with oxygen‐doped AlxGa1−xAs onn‐type GaAs
4. Current‐voltage and capacitance‐voltage characteristics of a metal/Al0.5Ga0.5As/GaAs capacitor
5. Electrical measurements onn+‐GaAs‐undoped Ga0.6Al0.4As‐n‐GaAs capacitors
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1. Electrical properties of ZnO/GaN heterostructures and photoresponsivity of ZnO layers;physica status solidi (c);2006-03
2. Capacitance-voltage characteristics of ZnO∕GaN heterostructures;Applied Physics Letters;2005-10-17
3. Electrical characterization for ZnO layers grown on GaN templates by molecular-beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2005
4. Charge Profiling of the p-AlGaN Electron Blocking Layer in AlGaInN Light Emitting Diode Structures;MRS Proceedings;2005
5. Electrical behavior of a static hole inversion layer at thei‐AlAs/n‐GaAs heterojunction;Journal of Applied Physics;1989-04-15
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