Many-body effects on optical gain in GaAsPN/GaPN quantum well lasers for silicon integration
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4865276
Reference20 articles.
1. Integrating silicon photonics
2. Room temperature operation of GaAsP(N)/GaP(N) quantum well based light-emitting diodes: Effect of the incorporation of nitrogen
3. Growth of low defect density GaP layers on Si substrates within the critical thickness by optimized shutter sequence and post-growth annealing
4. GaP-nucleation on exact Si (001) substrates for III/V device integration
5. Band structures and optical gain of strained GaAsxP1−x−yNy/GaP quantum wells
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