Atomic configuration of the interface between epitaxial Gd doped HfO2 high k thin films and Ge (001) substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3672415
Reference18 articles.
1. Integrated nanoelectronics for the future
2. Integration of functional epitaxial oxides into silicon: From high-K application to nanostructures
3. High oxidation state at the epitaxial interface of γ-Al2O3 thin films grown on Si(111) and Si(001)
4. Critical issues in the heteroepitaxial growth of alkaline-earth oxides on silicon
5. Fabrication of high-mobility Ge p-channel MOSFETs on Si substrates
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1. Study of Sn and Mg doping effects on TiO2/Ge stack structure by combinatorial synthesis;Japanese Journal of Applied Physics;2018-03-08
2. Comparative study on in situ surface cleaning effect of intrinsic oxide-covering GaAs surface using TMA precursor and Al2O3 buffer layer for HfGdO gate dielectrics;Journal of Materials Chemistry C;2018
3. Effect of Y and Mn doping into rutile type TiO2/Ge stack structure by combinatorial synthesis;Japanese Journal of Applied Physics;2017-05-15
4. Thin-film growth of (110) rutile TiO2on (100) Ge substrate by pulsed laser deposition;Japanese Journal of Applied Physics;2016-04-26
5. Evolution of interface chemistry and dielectric properties of HfO2/Ge gate stack modulated by Gd incorporation and thermal annealing;AIP Advances;2016-02
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