Effects of In0.53Ga0.47As cap layer and stoichiometry of dielectric capping layers on impurity-free vacancy disordering of In0.53Ga0.47As/InP multiquantum well structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1316789
Reference14 articles.
1. Novel structure MQW electroabsorption modulator/DFB-laser integrated device fabricated by selective area MOCVD growth
2. Wavelength modification of AlxGa1−xAs quantum well heterostructure lasers by layer interdiffusion
3. InGaAs/InGaAsP MQW electroabsorption modulator integrated with a DFB laser fabricated by band-gap energy control selective area MOCVD
4. Diffusion-induced disordering of Ga0.47In0.53As/InP multiple quantum wells with zinc
5. Polarization mode selective channel waveguides in an InGaAs/InP disordered superlattice
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1. SiNx-induced intermixing in AlInGaAs/InP quantum well through interdiffusion of group III atoms;Journal of Applied Physics;2012-11
2. Quantum well intermixing in AlInGaAs QW structures through the interdiffusion of group III atoms;SPIE Proceedings;2012-06-01
3. Proton irradiation-induced intermixing in InxGa1−xAs/InP quantum wells—the effect of In composition;Semiconductor Science and Technology;2006-09-05
4. Ion channeling effects on quantum well intermixing in phosphorus-implanted InGaAsP∕InGaAs∕InP;Journal of Applied Physics;2005-09
5. Quantum well intermixing enhancement using Ge-doped sol-gel derived SiO2 encapsulant layer in InGaAs∕InP laser structure;Applied Physics Letters;2005-02-21
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