The influence of alloying on the phase formation sequence of ultra-thin nickel silicide films and on the inheritance of texture
Author:
Affiliation:
1. Department of Solid-State Sciences, Ghent University, 9000 Gent, Belgium
2. IBM T.J. Watson Research Center, Yorktown Heights, New York, USA
3. Synchrotron SOLEIL, L'Orme des Merisiers, Saint Aubin BP48, 91192 Gif-sur-Yvette, France
Funder
Fonds Wetenschappelijk Onderzoek
Brookhaven National Laboratory
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.5022070
Reference53 articles.
1. Metal Silicides in CMOS Technology: Past, Present, and Future Trends
2. Towards implementation of a nickel silicide process for CMOS technologies
3. Silicide Technology for Integrated Circuits
4. Effects of additive elements on the phase formation and morphological stability of nickel monosilicide films
5. Kinetics of a transient silicide during the reaction of Ni thin film with (100)Si
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