Raman spectra from heat‐treated semi‐insulating GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92119
Reference9 articles.
1. Thermal conversion mechanism in semi‐insulating GaAs
2. Properties of vacancy defects in GaAs single crystals
3. Chromium redistribution during thermal annealing of semi‐insulating GaAs as a function of encapsulant and implant fluence
4. Redistribution of Cr during annealing of80Se‐implanted GaAs
5. Observations of phonon line broadening in the III-V semiconductors by surface reflection Raman scattering
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1. Novel features of photoluminescence spectra from acceptor-doped GaAs: formation of acceptor—acceptor pair emissions and optical compensation effect;Materials Science and Engineering: R: Reports;1996-06
2. Effects of Carbon-Ion Irradiation-Energies on the Molecular Beam Epitaxy of GaAs and Ingaas;MRS Proceedings;1995
3. Ion‐beam doping of GaAs with low‐energy (100 eV) C+using combined ion‐beam and molecular‐beam epitaxy;Journal of Applied Physics;1995-01
4. Optical Characterization of 100 eV C+ Ion Doped GaAs;MRS Proceedings;1993
5. Electrical performance and Raman scattering characterization of GaAs planar photoconductors;Applied Physics A Solids and Surfaces;1991-12
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