Low‐temperature AlGaAs/GaAs multiple quantum well structure and its application to photorefractive devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.116541
Reference17 articles.
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of Rapid Thermal Annealing on Photoluminescence Properties of Low-Temperature Grown InGaAs/GaAs Multiple Quantum Wells;Japanese Journal of Applied Physics;2006-04-07
2. Ultrafast low-temperature grown AlGaAs/GaAs photorefractive quantum wells using point defects as capture centers;Applied Physics Letters;1999-09-06
3. Effects of point defect distribution on arsenic precipitation in low-temperature grown III–V arsenides;Journal of Applied Physics;1999-09
4. Behavior of arsenic precipitation in low-temperature grown III–V arsenides;Journal of Crystal Growth;1999-05
5. Semi-insulating semiconductor heterostructures: Optoelectronic properties and applications;Journal of Applied Physics;1999-05
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