Improved photoluminescence of organometallic vapor phase epitaxial AlGaAs using a new gettering technique on the arsine source
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93735
Reference7 articles.
1. Oxygen gettering by graphite baffles during organometallic vapor phase epitaxial AlGaAs growth
2. A new approach to the “gettering” of oxygen during the growth of GaAlAs by low pressure MOCVD
3. A new technique for gettering oxygen and moisture from gases used in semiconductor processing
4. Photoluminescence of shallow acceptors in epitaxial AlxGa1−xAs
5. Photoluminescence investigation of residual shallow acceptors in AlxGa1−xAs grown by metalorganic vapor phase epitaxy
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