Fabrication of polyimide sacrificial layers with inclined sidewalls based on reactive ion etching
Author:
Funder
NNSFC
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4868379
Reference15 articles.
1. Porous silicon as a sacrificial material
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4. Stress from Discontinuous SiN Liner for Fully Silicided Gate Process
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