Enhanced photoluminescence caused by localized excitons observed in MgZnO alloy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3126703
Reference25 articles.
1. Isoelectronic Traps Due to Nitrogen in Gallium Phosphide
2. The Effect of Nitrogen Doping on GaAs1−xPx Electroluminescent Diodes
3. Origin of Luminescence from InGaN Diodes
4. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
5. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
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