The dominant factors affecting the memory characteristics of (Ta2O5)x(Al2O3)1−x high-k charge-trapping devices-Reference-Cited by-同舟云学术

The dominant factors affecting the memory characteristics of (Ta2O5)x(Al2O3)1−x high-k charge-trapping devices

Published:2014-09-22 Issue:12 Volume:105 Page:123504
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Gong Changjie¹,Yin Qiaonan²,Ou Xin²,Lan Xuexin¹,Liu Jinqiu²,Sun Chong²,Wang Laiguo²,Lu Wei²,Yin Jiang²,Xu Bo²,Xia Yidong²,Liu Zhiguo²,Li Aidong²

Affiliation:

1. National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, People's Republic of China

2. National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China

Funder

National Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4896595

Reference21 articles.

1. Performance improvement of flash memory using AlN as charge-trapping Layer

2. Integrated nanoelectronics for the future

3. On the go with SONOS

4. Performance Improvement of SONOS Memory by Bandgap Engineering of Charge-Trapping Layer

5. SONOS-type flash memory using an HfO/sub 2/ as a charge trapping layer deposited by the sol-gel spin-coating method

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