Compositional and strain analysis of In(Ga)N/GaN short period superlattices-Reference-Cited by-同舟云学术

Compositional and strain analysis of In(Ga)N/GaN short period superlattices

Published:2018-01-14 Issue:2 Volume:123 Page:024304
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Dimitrakopulos G. P.¹^ORCID,Vasileiadis I. G.¹,Bazioti C.¹,Smalc-Koziorowska J.²,Kret S.³^ORCID,Dimakis E.⁴,Florini N.¹,Kehagias Th.¹^ORCID,Suski T.²,Karakostas Th.¹,Moustakas T. D.⁵,Komninou Ph.¹

Affiliation:

1. Physics Department, Aristotle University of Thessaloniki, 54124 Thessaloniki, Greece

2. Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland

3. Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

4. Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany

5. Department of Electrical and Computer Engineering and Center for Photonics Research, Boston University, Boston, Massachusetts 02215, USA

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5009060

Reference51 articles.

1. Solid phase immiscibility in GaInN

2. Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition

3. Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy

4. Influence of indium clustering on the band structure of semiconducting ternary and quaternary nitride alloys

5. Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy

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