Acoustic phonon scattering of two-dimensional electrons in GaN/AlGaN heterostructures-Reference-Cited by-同舟云学术

Acoustic phonon scattering of two-dimensional electrons in GaN/AlGaN heterostructures

Published:2002-02-18 Issue:7 Volume:80 Page:1228-1230
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Knap W.,Borovitskaya E.,Shur M. S.,Hsu L.,Walukiewicz W.,Frayssinet E.,Lorenzini P.,Grandjean N.,Skierbiszewski C.,Prystawko P.,Leszczynski M.,Grzegory I.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1448401

Reference14 articles.

1. Electron mobility inAlxGa1−xN/GaNheterostructures

2. Effect of polarization fields on transport properties in AlGaN/GaN heterostructures

3. High-mobility AlGaN/GaN heterostructures grown by molecular-beam epitaxy on GaN templates prepared by hydride vapor phase epitaxy

4. Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy

5. High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates

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