The crucial role of doping for high repetition rate monolithic mode locking of multiple quantum well GaAs/AlGaAs lasers-Reference-Cited by-同舟云学术

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The crucial role of doping for high repetition rate monolithic mode locking of multiple quantum well GaAs/AlGaAs lasers

Published:1997-11-17 Issue:20 Volume:71 Page:2910-2912
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

McDougall S. D.,Vögele B.,Stanley C. R.,Ironside C. N.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.120213

Reference4 articles.

1. Mode-locking at very high repetition rates more than terahertz in passively mode-locked distributed-Bragg-reflector laser diodes

2. Monolithic multiple colliding pulse mode-locked quantum-well lasers, experiment and theory

3. GRINSCH GaAs/AlGaAs laser structures grown by OMVPE using a novel aluminium source

4. Measurements of reverse and forward bias absorption and gain spectra in semiconductor laser material

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mode-Locked Semiconductor Lasers;Handbook of Optoelectronic Device Modeling and Simulation;2017-09-25

2. Ultrafast pulse generation by semiconductor lasers;Semiconductor Lasers;2013

3. Advances in Mode-Locked Semiconductor Lasers;Advances in Semiconductor Lasers;2012

4. Fast phenomena in semiconductor lasers;Reports on Progress in Physics;2000-12-01

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