Photoluminescence and photoreflectance study of annealing effects on GaAs0.909Sb0.07N0.021 layer grown by gas-source molecular beam epitaxy-Reference-Cited by-同舟云学术

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Photoluminescence and photoreflectance study of annealing effects on GaAs0.909Sb0.07N0.021 layer grown by gas-source molecular beam epitaxy

Published:2008-06 Issue:11 Volume:103 Page:113508
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Hsu Hung-Pin,Huang Yen-Neng,Huang Ying-Sheng,Lin Yang-Ting,Ma Ta-Chun,Lin Hao-Hsiung,Tiong Kwong-Kau,Sitarek Piotr,Misiewicz Jan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2927490

Reference23 articles.

1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance

2. A 1.3-µm GaInNAs/GaAs Single-Quantum-Well Laser Diode with a High Characteristic Temperature over 200 K

3. III-N-V low-bandgap nitrides and their device applications

4. Reexamination of N composition dependence of coherently grown GaNAs band gap energy with high-resolution x-ray diffraction mapping measurements

5. Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells

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1. Strain and annealing temperature effects on the optical properties of GaNAs layers grown by molecular beam epitaxy;Thin Solid Films;2022-04

2. Comparative investigation of microjetting generated from monocrystalline tin surface and polycrystalline tin surface under plane impact loading;Chinese Physics B;2021-11-01

3. Coupling of dynamic ductile damage and melting in shock-induced micro-spalling: Modeling and applications;International Journal of Plasticity;2021-01

4. Effects of temperature on transition energies of GaAsSbN/GaAs single quantum wells;Journal of Physics: Condensed Matter;2011-07-25

5. Photoluminescence and surface photovoltage spectroscopy characterization of highly strained InGaAs/GaAs quantum well structures grown by metal organic vapor phase epitaxy;Materials Chemistry and Physics;2010-12

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