Intensity oscillations in reflection high‐energy electron diffraction during disilane gas source molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107197
Reference21 articles.
1. Dynamics of film growth of GaAs by MBE from Rheed observations
2. Damped oscillations in reflection high energy electron diffraction during GaAs MBE
3. Reflection high energy electron diffraction intensity behavior during homoepitaxial molecular beam epitaxy growth of GaAs and implications for growth kinetics and mechanisms
4. Existence of metastable step density distributions on GaAs(100) surfaces and their consequence for molecular beam epitaxial growth
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