Stress compensation in laser diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94477
Reference4 articles.
1. Defect structure introduced during operation of heterojunction GaAs lasers
2. Degradation mechanism of (Al · Ga)As double‐heterostructure laser diodes
3. Continuous operation of GaAs–Ga1 −xAlxAs double‐heterostructure lasers with 30 °C half‐lives exceeding 1000 h
4. Strain‐induced degradation of GaAs injection lasers
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1. Study on Droop Characteristics of Laser Diodes as Light Sources of Laser Beam Printer;Japanese Journal of Applied Physics;1995-12-15
2. The Interplay of Thermo-Mechanical Properties in the Growth and Processing of III-V Materials;MRS Proceedings;1991
3. High power cw operation over 400 mW on five‐stripe phase‐locked laser arrays assembled by new junction down mounting;Journal of Applied Physics;1987-01
4. Internal thermal stress distribution in InGaAsP/InP lasers;Applied Physics Letters;1986-10-06
5. Ten-thousand-hour operation of crank transverse-junction-stripe lasers grown by metal-organic chemical vapor deposition;Journal of Lightwave Technology;1986
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