Effect of nitrogen on band alignment in HfSiON gate dielectrics-Reference-Cited by-同舟云学术

Effect of nitrogen on band alignment in HfSiON gate dielectrics

Published:2005-11-21 Issue:21 Volume:87 Page:212905
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sayan S.,Nguyen N. V.,Ehrstein J.,Chambers J. J.,Visokay M. R.,Quevedo-Lopez M. A.,Colombo L.,Yoder D.,Levin I.,Fischer D. A.,Paunescu M.,Celik O.,Garfunkel E.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2135390

Reference8 articles.

1. Hafnium and zirconium silicates for advanced gate dielectrics

2. High-κ gate dielectrics: Current status and materials properties considerations

3. Application of HfSiON as a gate dielectric material

4. Effect of N incorporation on boron penetration from p+ polycrystalline-Si through HfSixOy films

5. Exchange-diffusion reactions in HfSiON during annealing studied by Rutherford backscattering spectrometry, nuclear reaction analysis and narrow resonant nuclear reaction profiling

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