Boron channeling implantations in silicon: Modeling of electronic stopping and damage accumulation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.358608
Reference29 articles.
1. Electronic Stopping of Channeled Ions in Silicon
2. Modeling of cumulative damage effects on ion-implantation profiles
3. Detailed computer simulation of damage accumulation in ion irradiated crystalline targets
4. Crystal-trim and its application to investigations on channeling effects during ion implantation
5. Computer simulation of atomic-displacement cascades in solids in the binary-collision approximation
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