Evolution of phosphorus-vacancy clusters in epitaxial germanium-Reference-Cited by-同舟云学术

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Evolution of phosphorus-vacancy clusters in epitaxial germanium

Published:2019-01-14 Issue:2 Volume:125 Page:025701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Vohra Anurag¹²,Khanam Afrina³^ORCID,Slotte Jonatan³^ORCID,Makkonen Ilja³^ORCID,Pourtois Geoffrey²⁴,Loo Roger²^ORCID,Vandervorst Wilfried¹²

Affiliation:

1. Institute for Nuclear and Radiation Physics, K.U. Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium

2. Imec vzw, Kapeldreef 75, B-3001 Leuven, Belgium

3. Department of Applied Physics, Aalto University, P.O. Box 15100, FI-00076 Aalto, Finland

4. Department of Chemistry, Plasmant Research Group, University of Antwerp, B-2610 Wilrijk-Antwerp, Belgium

Funder

Fonds Wetenschappelijk Onderzoek

Academy of Finland

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5054996

Reference40 articles.

1. Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

2. Interband Transitions inSnxGe1−xAlloys

3. Ge1-xSnxMaterials: Challenges and Applications

4. The Ge−P (Germanium-Phosphorus) system

5. Enhanced active P doping by using high order Ge precursors leading to intense photoluminescence

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1. Effects of phosphorous and antimony doping on thin Ge layers grown on Si;Scientific Reports;2024-04-04

2. Perspective on defect characterization in semiconductors by positron annihilation spectroscopy;Journal of Applied Physics;2024-01-23

3. Effects of phosphorous and antimony doping on thin Ge layers grown on Si;2024-01-16

4. P-doped bismuth sulfide for improved photocatalytic degradation of bisphenol A: Role of built-in electric field and S vacancies;Journal of Cleaner Production;2024-01

5. Efficient and stable activation by microwave annealing of nanosheet silicon doped with phosphorus above its solubility limit;Applied Physics Letters;2022-08-01

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