High peak-current-density strained-layer In0.3Ga0.7As/Al0.8Ga0.2As resonant tunneling diodes grown by metal-organic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119027
Reference16 articles.
1. Oscillations up to 712 GHz in InAs/AlSb resonant‐tunneling diodes
2. 110-GHz monolithic resonant-tunneling-diode trigger circuit
3. InAs/AlSb/GaSb resonant interband tunneling diodes and Au-on-InAs/AlSb-superlattice Schottky diodes for logic circuits
4. Static random access memories based on resonant interband tunneling diodes in the InAs/GaSb/AlSb material system
5. A self-latching A/D converter using resonant tunneling diodes
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1. Extremely High Peak Current Densities of over 1×106A/cm2in InP-Based InGaAs/AlAs Resonant Tunneling Diodes Grown by Metal–Organic Vapor-Phase Epitaxy;Japanese Journal of Applied Physics;2010-05-20
2. A New Organic Memory Made of an Organic Semiconductor Superlattice;Journal of the Korean Physical Society;2009-09-15
3. InGaAs/GaAsP/AlGaAs, deep-well, quantum-cascade light-emitting structures grown by metalorganic chemical vapor deposition;Journal of Crystal Growth;2008-04
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5. Resonant tunneling diode made of organic semiconductor superlattice;Applied Physics Letters;2006-10-09
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