Improvement of GaInNAs p‐i‐n photodetector responsivity by antimony incorporation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2435990
Reference22 articles.
1. GaInNAs: a novel material for long-wavelength semiconductor lasers
2. Laser gain and threshold properties in compressive-strained and lattice-matched GaInNAs/GaAs quantum wells
3. Characteristics of non-annealed λ=1.35μm closely lattice-matched GaInNAs/GaAs p-i-n photodetector structures grown by solid-source molecular beam epitaxy
4. Comparison of nitrogen compositions in the as-grown GaNxAs1−x on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopy
5. Incorporation of nitrogen in nitride-arsenides: Origin of improved luminescence efficiency after anneal
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1. Low temperature grown GaNAsSb: A promising material for photoconductive switch application;Applied Physics Letters;2013-09-09
2. Characterization of GaAs/AlGaAs resonant tunneling diodes with a GaInNAs absorption layer as 1.3 μm photo sensors;SPIE Proceedings;2012-10-24
3. GaAs/AlGaAs resonant tunneling diodes with a GaInNAs absorption layer for telecommunication light sensing;Applied Physics Letters;2012-04-23
4. Metamorphic In_020Ga_080As p-i-n photodetectors grown on GaAs substrates for near infrared applications;Optics Express;2011-03-31
5. Molecular beam epitaxy growth of bulk GaNAsSb on Ge/graded-SiGe/Si substrate;Journal of Crystal Growth;2009-03
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